A Model of Photoelectric Phenomena in Mos Structures at Low Electric Fields
نویسنده
چکیده
A comprehensive model is presented of the internal photoemission in MOS systems, at low electric fields (| | < 104 V/cm) in the dielectric. Model equations are separately solved for the case of zero photocurrent (J = 0) and for nonzero photocurrent (J ≠ 0), allowing calculation of various photoelectric characteristics of MOS structures. These calculated characteristics are shown to remain in excellent agreement with the experimental ones, taken for a range of different MOS structures, which strongly supports the validity of the model. It is also shown that based on this model new, highly precise MOS structure photoelectric measurement methods can be developed.
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